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| DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Ordering Information BVDSX/ BVDGX 350V RDS(ON) (max) 10 IDSS (min) 200mA Package Options TO-243AA1 DN3535N8 DN3535N8-G -G indicates package is RoHS compliant (`Green') 1 Same as SOT-89. Products shipped on 2000 piece carrier tape reels. Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Value BVDSX BVDGX 20V -55OC to +150OC 300OC Package Option D Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. G D S TO-243AA (top view) DN3535 Thermal Characteristics Package TO-243AA ID (continuous)1 230mA ID (pulsed) 500mA Power Dissipation @TA = 25OC 1.6W2 jc (OC/W) 15 ja (OC/W) 782 IDR1 230mA IDRM 500mA Notes: 1. ID (continuous) is limited by max rated Tj. 2. Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics Symbol Parameter Min Typ Max Units Conditions BVDSS VGS(OFF) VGS(OFF) IGSS ID(OFF) IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Drain-to-source breakdown voltage Gate-to-source OFF voltage Change in VGS(OFF) with temperature Gate body leakage current Drain-to-source leakage current Saturated drain-to-source current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON delay time Rise time Turn-OFF delay time Fall time Diode forward voltage drop Reverse recovery time 350 -1.5 200 200 - 800 -3.5 4.5 100 1.0 1.0 10 1.1 360 40 10 15 20 20 30 1.8 - V V mV/OC nA A mA mA %/OC mmho pF VGS = -5.0V, ID = 1.0A VDS = 15V, ID = 10A VDS = 15V, ID = 10A VGS = 20V, VDS = 0V VDS = Max rating, VGS = -5.0V VDS = 0.8 Max Rating, VGS = -5.0V, TA = 125OC VGS = 0V, VDS = 15V VGS = 0V, ID = 150mA VGS = 0V, ID = 150mA VDS = 10V, ID = 100mA VGS = -5.0V, VDS = 25V, f = 1MHz VDD = 25V, ID = 150mA, RGEN = 25, VGS = 0V to -10V VGS = -5.0V, ISD = 150mA VGS = -5.0V, ISD = 150mA ns V ns Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD RL OUTPUT 90% INPUT -10V 10% t(ON) PULSE GENERATOR t(OFF) tr td(OFF) tF RGEN td(ON) VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 2 DN3535 Typical Performance Curves Output Characteristics 1.0 VGS = +2.0V 0V 0.8 -0.5V Saturation Characteristics 1.0 VGS = +2V 0.8 0V -0.5V -0.8V ID (Amperes) -0.8V 0.6 -1.0V I D ( A m pe r es ) 0.6 -1V 0.4 -1.5V 0.2 -2V 0.0 0 50 100 150 200 250 300 350 0.4 -1.5V 0.2 -2V 0.0 0 2 4 6 8 10 VDS (Volts) Transconductance vs. Drain Current 1.0 VDS = 10V 0.8 TA = -55C 1.5 2.0 VDS (Volts) Power Dissipation vs. Case Temperature TO-243AA GFS (siemens) 0.6 TA = 25C 0.4 TA = 125C PD (Watts) 1.0 0.5 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 ID (Amperes) Maximum Rated Safe Operating Area 10 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) TO-243AA 0.8 TO-243AA (pulsed) 1.0 P D = 1.6W T C = 25C ID (amperes) TO-243AA (DC) 0.6 0.1 0.4 0.01 T A =25C 0.2 0.001 1 10 100 1000 0 0.001 0.01 0.1 1.0 10 VDS (Volts) 3 tp (seconds) DN3535 Typical Performance Curves (cont.) BVDSV Variation with Temperature 1.2 ID = 1mA VGS = -5V On Resistance vs. Drain Current 25 BVDSV (Normalized) 20 1.1 RDS(ON) (ohms) VGS = 0V 15 1.0 10 0.9 5 0.8 -50 0 50 100 150 0 0.0 0.2 0.4 0.6 0.8 1.0 TJ (C) Transfer Characteristics 1300 VDS = 10V 1100 TA = -55C ID (Amperes) VGS(OFF) and RDS(ON) w/ Temperature 1.4 2.4 VGS(OFF) (normalized) 1.2 VGS(OFF) @ 10A 2.0 900 TA = 25C 700 TA = 125C 1.0 1.6 500 0.8 RDS(on) @ 0V, 150mA 1.2 300 0.6 0.8 100 0 -3 -2 -1 0 1 2 0.4 -50 -25 0 25 50 75 0.4 100 125 150 VGS (Volts) Capacitance vs. Drain Source Voltage 350 VGS = -5V 300 2 1 ID = 150mA 3 TJ (C) Gate Drive Dynamic Characteristics C (picofarads) 250 200 VGS (volts) 0 -1 -2 -3 -4 -5 VDS =40V 150 CISS 100 50 0 0 CRSS 10 20 COSS 30 40 0 500 1000 1500 2000 VDS (volts) 4 QG (picocoulombs) RDS(ON) (normalized) ID (Milliamperes) DN3535 3-Lead TO-243AA (SOT-89) Surface Mount Package (N8) 4.50 0.10 1.72 0.10 0.40 0.05 Exclusion Zone 1.50 0.10 4.10 0.15 2.45 0.15 2.21 0.08 No Vias/Traces in this area. Shape of pad may vary. 1.05 0.15 0.42 0.06 1.50 BSC 3.00 BSC 0.5 0.06 Top View Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3535 A012307 5 |
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